Apparatuses and methods for performing logical operations using sensing circuitry

ABSTRACT

The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry comprising a primary latch coupled to a sense line of the array. The sensing circuitry can be configured to perform a first operation phase of a logical operation by sensing a memory cell coupled to the sense line, perform a number of intermediate operation phases of the logical operation by sensing a respective number of different memory cells coupled to the sense line, and accumulate a result of the first operation phase and the number of intermediate operation phases in a secondary latch coupled to the primary latch without performing a sense line address access.

PRIORITY INFORMATION

This application is a Continuation of U.S. application Ser. No.15/439,681, filed Feb. 22, 2017, which issues as U.S. Pat. No. 9,899,068on Feb. 20, 2018, which is a Continuation of U.S. application Ser. No.15/051,112, filed Feb. 23, 2016, which issued as U.S. Pat. No. 9,589,607on Mar. 7, 2017, which is a Continuation of U.S. application Ser. No.14/538,399, filed Nov. 11, 2014, which issued as U.S. Pa. No. 9,275,701on Mar. 1, 2016, which is a Continuation of U.S. application Ser. No.13/962,399, filed Aug. 8, 2013, which issued as U.S. Pat. No. 8,971,124on Mar. 3, 2015, the contents of which are incorporated herein byreference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory andmethods, and more particularly, to apparatuses and methods related toperforming logical operations using sensing circuitry.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic systems. There aremany different types of memory including volatile and non-volatilememory. Volatile memory can require power to maintain its data (e.g.,host data, error data, etc.) and includes random access memory (RAM),dynamic random access memory (DRAM), static random access memory (SRAM),synchronous dynamic random access memory (SDRAM), and thyristor randomaccess memory (TRAM), among others. Non-volatile memory can providepersistent data by retaining stored data when not powered and caninclude NAND flash memory, NOR flash memory, and resistance variablememory such as phase change random access memory (PCRAM), resistiverandom access memory (RRAIVI), and magnetoresistive random access memory(MRAM), such as spin torque transfer random access memory (STT RAM),among others.

Electronic systems often include a number of processing resources (e.g.,one or more processors), which may retrieve and execute instructions andstore the results of the executed instructions to a suitable location. Aprocessor can comprise a number of functional units such as arithmeticlogic unit (ALU) circuitry, floating point unit (FPU) circuitry, and/ora combinatorial logic block, for example, which can be used to executeinstructions by performing logical operations such as AND, OR, NOT,NAND, NOR, and XOR logical operations on data (e.g., one or moreoperands). For example, the functional unit circuitry (FUC) may be usedto perform arithmetic operations such as addition, subtraction,multiplication, and/or division on operands.

A number of components in an electronic system may be involved inproviding instructions to the FUC for execution. The instructions may begenerated, for instance, by a processing resource such as a controllerand/or host processor. Data (e.g., the operands on which theinstructions will be executed) may be stored in a memory array that isaccessible by the FUC. The instructions and/or data may be retrievedfrom the memory array and sequenced and/or buffered before the FUCbegins to execute instructions on the data. Furthermore, as differenttypes of operations may be executed in one or multiple clock cyclesthrough the FUC, intermediate results of the instructions and/or datamay also be sequenced and/or buffered.

In many instances, the processing resources (e.g., processor and/orassociated FUC) may be external to the memory array, and data isaccessed via a bus between the processing resources and the memory arrayto execute a set of instructions. Processing performance may be improvedin a processor-in-memory (PIM) device, in which a processor may beimplemented internal and/or near to a memory (e.g., directly on a samechip as the memory array), which may conserve time and power inprocessing. However, such PIM devices may have various drawbacks such asan increased chip size. Moreover, such PIM devices may still consumeundesirable amounts of power in association with performing logicaloperations (e.g., compute functions).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an apparatus in the form of a computingsystem including a memory device in accordance with a number ofembodiments of the present disclosure.

FIG. 2A illustrates a schematic diagram of a portion of a memory arraycoupled to sensing circuitry in accordance with a number of embodimentsof the present disclosure.

FIG. 2B illustrates a timing diagram associated with performing a numberof logical operations using sensing circuitry in accordance with anumber of embodiments of the present disclosure.

FIGS. 2C-1 and 2C-2 illustrate timing diagrams associated withperforming a number of logical operations using sensing circuitry inaccordance with a number of embodiments of the present disclosure.

FIGS. 2D-1 and 2D-2 illustrate timing diagrams associated withperforming a number of logical operations using sensing circuitry inaccordance with a number of embodiments of the present disclosure.

FIG. 3 illustrates a schematic diagram of a portion of sensing circuitryin accordance with a number of embodiments of the present disclosure.

DETAILED DESCRIPTION

The present disclosure includes apparatuses and methods related toperforming logical operations using sensing circuitry. An exampleapparatus comprises an array of memory cells and sensing circuitrycomprising a primary latch coupled to a sense line of the array. Thesensing circuitry can be configured to perform a first operation phaseof a logical operation by sensing a memory cell coupled to the senseline, perform a number of intermediate operation phases of the logicaloperation by sensing a respective number of different memory cellscoupled to the sense line, and accumulate a result of the firstoperation phase and the number of intermediate operation phases in asecondary latch coupled to the primary latch without performing a senseline address access.

A number of embodiments of the present disclosure can provide improvedparallelism and/or reduced power consumption in association withperforming compute functions as compared to previous systems such asprevious PIM systems and systems having an external processor (e.g., aprocessing resource located external from a memory array, such as on aseparate integrated circuit chip). For instance, a number of embodimentscan provide for performing fully complete compute functions such asinteger add, subtract, multiply, divide, and CAM (content addressablememory) functions without transferring data out of the memory array andsensing circuitry via a bus (e.g., data bus, address bus, control bus),for instance. Such compute functions can involve performing a number oflogical operations (e.g., AND, OR, NOT, NOR, NAND, XOR, etc.). However,embodiments are not limited to these examples. For instance, performinglogical operations can include performing a number of non-boolean logicoperations such as copy, compare, destroy, etc.

In previous approaches, data may be transferred from the array andsensing circuitry (e.g., via a bus comprising input/output (I/O) lines)to a processing resource such as a processor, microprocessor, and/orcompute engine, which may comprise ALU circuitry and/or other functionalunit circuitry configured to perform the appropriate logical operations.However, transferring data from a memory array and sensing circuitry tosuch processing resource(s) can involve significant power consumption.Even if the processing resource is located on a same chip as the memoryarray, significant power can be consumed in moving data out of the arrayto the compute circuitry, which can involve performing a sense lineaddress access (e.g., firing of a column decode signal) in order totransfer data from sense lines onto I/O lines (e.g., local I/O lines),moving the data to the array periphery, and providing the data to thecompute function.

Furthermore, the circuitry of the processing resource(s) (e.g., computeengine) may not conform to pitch rules associated with a memory array.For example, the cells of a memory array may have a 4F² or 6F² cellsize, where “F” is a feature size corresponding to the cells. As such,the devices (e.g., logic gates) associated with ALU circuitry ofprevious PIM systems may not be capable of being formed on pitch withthe memory cells, which can affect chip size and/or memory density, forexample. A number of embodiments of the present disclosure includesensing circuitry formed on pitch with memory cells of the array andcapable of performing compute functions such as those described hereinbelow.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how one or more embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure. As used herein, the designator “N,”particularly with respect to reference numerals in the drawings,indicates that a number of the particular feature so designated can beincluded. As used herein, “a number of” a particular thing can refer toone or more of such things (e.g., a number of memory arrays can refer toone or more memory arrays).

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 206 may referenceelement “06” in FIG. 2A, and a similar element may be referenced as 306in FIG. 3. As will be appreciated, elements shown in the variousembodiments herein can be added, exchanged, and/or eliminated so as toprovide a number of additional embodiments of the present disclosure. Inaddition, as will be appreciated, the proportion and the relative scaleof the elements provided in the figures are intended to illustratecertain embodiments of the present invention, and should not be taken ina limiting sense.

FIG. 1 is a block diagram of an apparatus in the form of a computingsystem 100 including a memory device 120 in accordance with a number ofembodiments of the present disclosure. As used herein, a memory device120, a memory array 130, and/or sensing circuitry 150 might also beseparately considered an “apparatus.”

System 100 includes a host 110 coupled to memory device 120, whichincludes a memory array 130. Host 110 can be a host system such as apersonal laptop computer, a desktop computer, a digital camera, a smartphone, or a memory card reader, among various other types of hosts. Host110 can include a system motherboard and/or backplane and can include anumber of processing resources (e.g., one or more processors,microprocessors, or some other type of controlling circuitry). Thesystem 100 can include separate integrated circuits or both the host 110and the memory device 120 can be on the same integrated circuit. Thesystem 100 can be, for instance, a server system and/or a highperformance computing (HPC) system and/or a portion thereof Although theexample shown in FIG. 1 illustrates a system having a Von Neumannarchitecture, embodiments of the present disclosure can be implementedin non-Von Neumann architectures (e.g., a Turing machine), which may notinclude one or more components (e.g., CPU, ALU, etc.) often associatedwith a Von Neumann architecture.

For clarity, the system 100 has been simplified to focus on featureswith particular relevance to the present disclosure. The memory array130 can be a DRAM array, SRAM array, STT RAM array, PCRAM array, TRAMarray, RRAM array, NAND flash array, and/or NOR flash array, forinstance. The array 130 can comprise memory cells arranged in rowscoupled by access lines (which may be referred to herein as word linesor select lines) and columns coupled by sense lines (which may bereferred to herein as digit lines or data lines). Although a singlearray 130 is shown in FIG. 1, embodiments are not so limited. Forinstance, memory device 120 may include a number of arrays 130 (e.g., anumber of banks of DRAM cells). An example DRAM array is described inassociation with FIG. 2A.

The memory device 120 includes address circuitry 142 to latch addresssignals provided over an I/O bus 156 (e.g., a data bus) through I/Ocircuitry 144. Address signals are received and decoded by a row decoder146 and a column decoder 152 to access the memory array 130. Data can beread from memory array 130 by sensing voltage and/or current changes onthe sense lines using sensing circuitry 150. The sensing circuitry 150can read and latch a page (e.g., row) of data from the memory array 130.The I/O circuitry 144 can be used for bi-directional data communicationwith host 110 over the I/O bus 156. The write circuitry 148 is used towrite data to the memory array 130.

Control circuitry 140 decodes signals provided by control bus 154 fromthe host 110. These signals can include chip enable signals, writeenable signals, and address latch signals that are used to controloperations performed on the memory array 130, including data read, datawrite, and data erase operations. In various embodiments, the controlcircuitry 140 is responsible for executing instructions from the host110. The control circuitry 140 can be a state machine, a sequencer, orsome other type of controller.

An example of the sensing circuitry 150 is described further below inassociation with FIGS. 2A and 3. For instance, in a number ofembodiments, the sensing circuitry 150 can comprise a number of senseamplifiers (e.g., sense amplifier 206 shown in FIG. 2A or senseamplifier 306 shown in FIG. 3) and a number of compute components (e.g.,compute component 231 shown in FIG. 2A), which may comprise anaccumulator and can be used to perform logical operations (e.g., on dataassociated with complementary sense lines). In a number of embodiments,the sensing circuitry (e.g., 150) can be used to perform logicaloperations using data stored in array 130 as inputs and store theresults of the logical operations back to the array 130 withouttransferring via a sense line address access (e.g., without firing acolumn decode signal). As such, various compute functions can beperformed within using sensing circuitry 150 rather than (or inassociation with) being performed by processing resources external tothe sensing circuitry (e.g., by a processor associated with host 110and/or other processing circuitry, such as ALU circuitry, located ondevice 120 (e.g., on control circuitry 140 or elsewhere)). In variousprevious approaches, data associated with an operand, for instance,would be read from memory via sensing circuitry and provided to externalALU circuitry via I/O lines (e.g., via local I/O lines and/or global I/Olines). The external ALU circuitry could include a number of registersand would perform compute functions using the operands, and the resultwould be transferred back to the array via the I/O lines. In contrast,in a number of embodiments of the present disclosure, sensing circuitry(e.g., 150) is configured to perform logical operations on data storedin memory (e.g., array 130) and store the result back to the memorywithout activating (e.g., enabling) an I/O line (e.g., a local I/O line)coupled to the sensing circuitry, which can be formed on pitch with thememory cells of the array. Activating an I/O line can include enabling(e.g., turning on) a transistor having a gate coupled to a decode signal(e.g., a column decode signal) and a source/drain coupled to the I/Oline. Embodiments are not so limited. For instance, in a number ofembodiments, the sensing circuitry (e.g., 150) can be used to performlogical operations without activating column decode lines of the array;however, the local I/O line(s) may be activated in order to transfer aresult to a suitable location other than back to the array (e.g., to anexternal register).

As such, in a number of embodiments, circuitry external to array 130 andsensing circuitry 150 is not needed to perform compute functions as thesensing circuitry 150 can perform the appropriate logical operations toperform such compute functions without the use of an external processingresource. Therefore, the sensing circuitry 150 may be used to complimentand/or to replace, at least to some extent, such an external processingresource (or at least the bandwidth of such an external processingresource). However, in a number of embodiments, the sensing circuitry150 may be used to perform logical operations (e.g., to executeinstructions) in addition to logical operations performed by an externalprocessing resource (e.g., host 110). For instance, host 110 and/orsensing circuitry 150 may be limited to performing only certain logicaloperations and/or a certain number of logical operations.

FIG. 2A illustrates a schematic diagram of a portion of a memory array230 coupled to sensing circuitry in accordance with a number ofembodiments of the present disclosure. In this example, the memory array230 is a DRAM array of 1T1C (one transistor one capacitor) memory cellseach comprised of an access device 202 (e.g., transistor) and a storageelement 203 (e.g., a capacitor). In a number of embodiments, the memorycells are destructive read memory cells (e.g., reading the data storedin the cell destroys the data such that the data originally stored inthe cell is refreshed after being read). The cells of array 230 arearranged in rows coupled by word lines 204-0 (Row0), 204-1 (Row1),204-2, (Row2) 204-3 (Row3), . . . , 204-N (RowN) and columns coupled bysense lines (e.g., digit lines) 205-1 (D) and 205-2 (D_). In thisexample, each column of cells is associated with a pair of complementarysense lines 205-1 (D) and 205-2 (D_). Although only a single column ofmemory cells is illustrated in FIG. 2A, embodiments are not so limited.For instance, a particular array may have a number of columns of memorycells and/or sense lines (e.g., 4,096, 8,192, 16,384, etc.). A gate of aparticular memory cell transistor 202 is coupled to its correspondingword line 204-0, 204-1, 204-2, 204-3, . . . , 204-N, a firstsource/drain region is coupled to its corresponding sense line 205-1,and a second source/drain region of a particular memory cell transistoris coupled to its corresponding capacitor 203. Although not illustratedin FIG. 2A, the sense line 205-2 may also be coupled to a column ofmemory cells.

The array 230 is coupled to sensing circuitry in accordance with anumber of embodiments of the present disclosure. In this example, thesensing circuitry comprises a sense amplifier 206 and a computecomponent 231. The sensing circuitry can be sensing circuitry 150 shownin FIG. 1. The sense amplifier 206 is coupled to the complementary senselines D, D_ corresponding to a particular column of memory cells. Thesense amplifier 206 can be a sense amplifier such as sense amplifier 306described below in association with FIG. 3. As such, the sense amp 206can be operated to determine a state (e.g., logic data value) stored ina selected cell. Embodiments are not limited to the example senseamplifier 206. For instance, sensing circuitry in accordance with anumber of embodiments described herein can include current-mode senseamplifiers and/or single-ended sense amplifiers (e.g., sense amplifierscoupled to one sense line).

In a number of embodiments, a compute component (e.g., 231) can comprisea number of transistors formed on pitch with the transistors of thesense amp (e.g., 206) and/or the memory cells of the array (e.g., 230),which may conform to a particular feature size (e.g., 4F², 6F², etc.).As described further below, the compute component 231 can, inconjunction with the sense amp 206, operate to perform various logicaloperations using data from array 230 as input and store the result backto the array 230 without transferring the data via a sense line addressaccess (e.g., without firing a column decode signal such that data istransferred to circuitry external from the array and sensing circuitryvia local I/O lines). As such, a number of embodiments of the presentdisclosure can enable performing logical operations and computingfunctions associated therewith using less power than various previousapproaches. Additionally, since a number of embodiments eliminate theneed to transfer data across I/O lines in order to perform computefunctions, a number of embodiments can enable an increased parallelprocessing capability as compared to previous approaches.

In the example illustrated in FIG. 2A, the circuitry corresponding tocompute component 231 comprises five transistors coupled to each of thesense lines D and D_; however, embodiments are not limited to thisexample. Transistors 207-1 and 207-2 have a first source/drain regioncoupled to sense lines D and D_, respectively, and a second source/drainregion coupled to a cross coupled latch (e.g., coupled to gates of apair of cross coupled transistors, such as cross coupled NMOStransistors 208-1 and 208-2 and cross coupled PMOS transistors 209-1 and209-2). As described further herein, the cross coupled latch comprisingtransistors 208-1, 208-2, 209-1, and 209-2 can be referred to as asecondary latch (the cross coupled latch corresponding to sense amp 206can be referred to herein as a primary latch).

The transistors 207-1 and 207-2 can be referred to as pass transistors,which can be enabled via respective signals 211-1 (Passd) and 211-2(Passdb) in order to pass the voltages or currents on the respectivesense lines D and D_ to the inputs of the cross coupled latch comprisingtransistors 208-1, 208-2, 209-1, and 209-2 (e.g., the input of thesecondary latch). In this example, the second source/drain region oftransistor 207-1 is coupled to a first source/drain region oftransistors 208-1 and 209-1 as well as to the gates of transistors 208-2and 209-2. Similarly, the second source/drain region of transistor 207-2is coupled to a first source/drain region of transistors 208-2 and 209-2as well as to the gates of transistors 208-1 and 209-1.

A second source/drain region of transistor 208-1 and 208-2 is commonlycoupled to a negative control signal 212-1 (Accumb). A secondsource/drain region of transistors 209-1 and 209-2 is commonly coupledto a positive control signal 212-2 (Accum). The Accum signal 212-2 canbe a supply voltage (e.g., VDD) and the Accumb signal can be a referencevoltage (e.g., ground). Enabling signals 212-1 and 212-2 activates thecross coupled latch comprising transistors 208-1, 208-2, 209-1, and209-2 corresponding to the secondary latch. The activated sense amp pairoperates to amplify a differential voltage between common node 217-1 andcommon node 217-2 such that node 217-1 is driven to one of the Accumsignal voltage and the Accumb signal voltage (e.g., to one of VDD andground), and node 217-2 is driven to the other of the Accum signalvoltage and the Accumb signal voltage. As described further below, thesignals 212-1 and 212-2 are labeled “Accum” and “Accumb” because thesecondary latch can serve as an accumulator while being used to performa logical operation. In a number of embodiments, an accumulatorcomprises the cross coupled transistors 208-1, 208-2, 209-1, and 209-2forming the secondary latch as well as the pass transistors 207-1 and207-2. As described further herein, in a number of embodiments, acompute component comprising an accumulator coupled to a sense amplifiercan be configured to perform a logical operation that comprisesperforming an accumulate operation on a data value represented by asignal (e.g., voltage or current) on at least one of a pair ofcomplementary sense lines.

The compute component 231 also includes inverting transistors 214-1 and214-2 having a first source/drain region coupled to the respective digitlines D and D_. A second source/drain region of the transistors 214-1and 214-2 is coupled to a first source/drain region of transistors 216-1and 216-2, respectively. The gates of transistors 214-1 and 214-2 arecoupled to a signal 213 (InvD). The gate of transistor 216-1 is coupledto the common node 217-1 to which the gate of transistor 208-2, the gateof transistor 209-2, and the first source/drain region of transistor208-1 are also coupled. In a complementary fashion, the gate oftransistor 216-2 is coupled to the common node 217-2 to which the gateof transistor 208-1, the gate of transistor 209-1, and the firstsource/drain region of transistor 208-2 are also coupled. As such,enabling signal InvD serves to invert the data value stored in thesecondary latch and drives the inverted value onto sense lines 205-1 and205-2.

The compute component 231 shown in FIG. 2A can be operated (e.g., viathe Passd, Passdb, Accumb, Accum, and InvD signals) to perform variouslogical operations including AND, NAND, OR, and NOR operations, amongothers. For instance, as described further below, sensing circuitry(e.g., sense amp 206 and compute component 231) in accordance with anumber of embodiments can be operated to perform AND, NAND, OR, and NORoperations, among others. The logical operations can be R-input logicaloperations, with “R” representing a value of two or more.

For instance, an R-input logical operation can be performed using datastored in array 230 as inputs, and the result can be stored to asuitable location (e.g., back to array 230 and/or to a differentlocation) via operation of the sensing circuitry. In the examplesdescribed below, an R-input logical operation includes using a datavalue (e.g., logic 1 or logic 0) stored in a memory cell coupled to afirst particular word line (e.g., 204-0) and to a particular sense line(e.g., 205-1) as a first input and data values stored in memory cellscoupled to a number of additional word lines (e.g., 204-1 to 204-N), andcommonly coupled to the particular sense line (e.g., 205-1), as arespective number of additional inputs. In this manner, a number oflogical operations can be performed in parallel. For instance, 4Klogical operations could be performed in parallel on an array having 4Ksense lines. In this example, 4K cells coupled to a first word linecould serve as 4K first inputs, 4K cells coupled to a second word linecould serve as 4K second inputs, and 4K cells coupled to a third wordline could serve as 4K third inputs in a 3-input logical operation. Assuch, in this example, 4K separate 3-input logical operations can beperformed in parallel.

In a number of embodiments, a first operation phase of an R-inputlogical operation includes performing a sensing operation on a memorycell coupled to a particular word line (e.g., 204-0) and to a particularsense line (e.g., 205-1) to determine its stored data value (e.g., logic1 or logic 0), which serves as a first input in an R-input logicaloperation. The first input (e.g., the sensed stored data value) can thenbe transferred (e.g., copied) to a latch associated with computecomponent 231. A number of intermediate operation phases can beperformed and can also include performing sensing operations on memorycells coupled to a respective number of additional word lines (e.g.,204-1 to 204-N) and to the particular sense line (e.g., 205-1) todetermine their stored data values, which serve as a respective numberof additional inputs (e.g., R−1 additional inputs) to the R-inputlogical operation. A last operation phase of an R-input logicaloperation involves operating the sensing circuitry to store the resultof the logical operation to a suitable location. As an example, theresult can be stored back to the array (e.g., back to a memory cellcoupled to the particular sense line 205-1). Storing the result back tothe array can occur without activating a column decode line. The resultcan also be stored to a location other than in array 230. For instance,the result can be stored (e.g., via local I/O lines coupled to sense amp206) to an external register associated with a processing resource suchas a host processor; however, embodiments are not so limited. Detailsregarding the first, intermediate, and last operation phases aredescribed further below in association with FIGS. 2B, 2C-1, 2C-2, 2D-1,and 2D-2.

FIG. 2B illustrates a timing diagram 285-1 associated with performing anumber of logical operations using sensing circuitry in accordance witha number of embodiments of the present disclosure. Timing diagram 285-1illustrates signals (e.g., voltage signals) associated with performing afirst operation phase of a logical operation (e.g., an R-input logicaloperation). The first operation phase described in FIG. 2B can be afirst operation phase of an AND, NAND, OR, or NOR operation, forinstance. As described further below, performing the operation phaseillustrated in FIG. 2B can involve consuming significantly less energy(e.g., about half) than previous processing approaches, which mayinvolve providing a full swing between voltage rails (e.g., between asupply and ground) to perform a compute function.

In the example illustrated in FIG. 2B, the voltage rails correspondingto complementary logic values (e.g., “1” and “0”) are a supply voltage274 (VDD) and a ground voltage 272 (Gnd). Prior to performing a logicaloperation, equilibration can occur such that the complementary senselines D and D_ are shorted together at an equilibration voltage 225(VDD/2). Equilibration is described further below in association withFIG. 3.

At time t₁, the equilibration signal 226 is deactivated, and then aselected row is activated (e.g., the row corresponding to a memory cellwhose data value is to be sensed and used as a first input). Signal204-0 represents the voltage signal applied to the selected row (e.g.,row 204-0). When row signal 204-0 reaches the threshold voltage (Vt) ofthe access transistor (e.g., 202) corresponding to the selected cell,the access transistor turns on and couples the sense line D to theselected memory cell (e.g., to the capacitor 203 if the cell is a 1T1CDRAM cell), which creates a differential voltage signal between thesense lines D and D_ (e.g., as indicated by signals 205-1 and 205-2,respectively) between times t₂ and t₃. The voltage of the selected cellis represented by signal 203. Due to conservation of energy, creatingthe differential signal between D and D_ (e.g., by coupling the cell tosense line D) does not consume energy, since the energy associated withactivating/deactivating the row signal 204 can be amortized over theplurality of memory cells coupled to the row.

At time t₃, the sense amp (e.g., 206) activates (e.g., the positivecontrol signal 231 (e.g., PSA 331 shown in FIG. 3) goes high, and thenegative control signal 228 (e.g., RNL_328) goes low), which amplifiesthe differential signal between D and D_, resulting in a voltage (e.g.,VDD) corresponding to a logic 1 or a voltage (e.g., ground)corresponding to a logic 0 being on sense line D (and the other voltagebeing on complementary sense line D_), such that the sensed data valueis stored in the primary latch of sense amp 206. The primary energyconsumption occurs in charging the sense line D ( 205-1) from theequilibration voltage VDD/2 to the rail voltage VDD.

At time t₄, the pass transistors 207-1 and 207-2 are enabled (e.g., viarespective Passd and Passdb control signals applied to control lines211-1 and 211-2, respectively). The control signals 211-1 and 211-2 arereferred to collectively as control signals 211. As used herein, variouscontrol signals, such as Passd and Passdb, may be referenced byreferring to the control lines to which the signals are applied. Forinstance, a Passd signal can be referred to as control signal 211-1. Attime t₅, the accumulator control signals Accumb and Accum are activatedvia respective control lines 212-1 and 212-2. As described below, theaccumulator control signals 212-1 and 212-2 may remain activated forsubsequent operation phases. As such, in this example, activating thecontrol signals 212-1 and 212-2 activates the secondary latch (e.g.,accumulator) of compute component 231. The sensed data value stored insense amp 206 is transferred (e.g., copied) to the secondary latch.

At time t₆, the pass transistors 207-1 and 207-2 are disabled (e.g.,turned off); however, since the accumulator control signals 212-1 and212-2 remain activated, an accumulated result is stored (e.g., latched)in the secondary latch (e.g., accumulator). At time t₇, the row signal204-0 is deactivated, and the array sense amps are deactivated at timet₈ (e.g., sense amp control signals 228 and 231 are deactivated).

At time t₉, the sense lines D and D_ are equilibrated (e.g.,equilibration signal 226 is activated), as illustrated by sense linevoltage signals 205-1 and 205-2 moving from their respective rail valuesto the equilibration voltage 225 (VDD/2). The equilibration consumeslittle energy due to the law of conservation of energy. As describedbelow in association with FIG. 3, equilibration can involve shorting thecomplementary sense lines D and D_ together at an equilibration voltage,which is VDD/2, in this example. Equilibration can occur, for instance,prior to a memory cell sensing operation.

FIGS. 2C-1 and 2C-2 illustrate timing diagrams 285-2 and 285-3,respectively, associated with performing a number of logical operationsusing sensing circuitry in accordance with a number of embodiments ofthe present disclosure. Timing diagrams 285-2 and 285-3 illustratesignals (e.g., voltage signals) associated with performing a number ofintermediate operation phases of a logical operation (e.g., an R-inputlogical operation). For instance, timing diagram 285-2 corresponds to anumber of intermediate operation phases of an R-input NAND operation oran R-input AND operation, and timing diagram 285-3 corresponds to anumber of intermediate operation phases of an R-input NOR operation oran R-input OR operation. For example, performing an AND or NANDoperation can include performing the operation phase shown in FIG. 2C-1one or more times subsequent to an initial operation phase such as thatdescribed in FIG. 2B. Similarly, performing an OR or NOR operation caninclude performing the operation phase shown in FIG. 2C-2 one or moretimes subsequent to an initial operation phase such as that described inFIG. 2B.

As shown in timing diagrams 285-2 and 285-3, at time t₁, equilibrationis disabled (e.g., the equilibration signal 226 is deactivated), andthen a selected row is activated (e.g., the row corresponding to amemory cell whose data value is to be sensed and used as an input suchas a second input, third input, etc.). Signal 204-1 represents thevoltage signal applied to the selected row (e.g., row 204-1). When rowsignal 204-1 reaches the threshold voltage (Vt) of the access transistor(e.g., 202) corresponding to the selected cell, the access transistorturns on and couples the sense line D to the selected memory cell (e.g.,to the capacitor 203 if the cell is a 1T1C DRAM cell), which creates adifferential voltage signal between the sense lines D and D_ (e.g., asindicated by signals 205-1 and 205-2, respectively) between times t₂ andt₃. The voltage of the selected cell is represented by signal 203. Dueto conservation of energy, creating the differential signal between Dand D_ (e.g., by coupling the cell to sense line D) does not consumeenergy, since the energy associated with activating/deactivating the rowsignal 204 can be amortized over the plurality of memory cells coupledto the row.

At time t₃, the sense amp (e.g., 206) activates (e.g., the positivecontrol signal 231 (e.g., PSA 331 shown in FIG. 3) goes high, and thenegative control signal 228 (e.g., RNL 328) goes low), which amplifiesthe differential signal between D and D_, resulting in a voltage (e.g.,VDD) corresponding to a logic 1 or a voltage (e.g., ground)corresponding to a logic 0 being on sense line D (and the other voltagebeing on complementary sense line D_), such that the sensed data valueis stored in the primary latch of sense amp 206. The primary energyconsumption occurs in charging the sense line D (205-1) from theequilibration voltage VDD/2to the rail voltage VDD.

As shown in timing diagrams 285-2 and 285-3, at time t₄ (e.g., after theselected cell is sensed), only one of control signals 211-1 (Passd) and211-2 (Passdb) is activated (e.g., only one of pass transistors 207-1and 207-2 is enabled), depending on the particular logic operation. Forexample, since timing diagram 285-2 corresponds to an intermediate phaseof a NAND or AND operation, control signal 211-1 is activated at time t₄and control signal 211-2 remains deactivated. Conversely, since timingdiagram 285-3 corresponds to an intermediate phase of a NOR or ORoperation, control signal 211-2 is activated at time t₄ and controlsignal 211-1 remains deactivated. Recall from above that the accumulatorcontrol signals 212-1 (Accumb) and 212-2 (Accum) were activated duringthe initial operation phase described in FIG. 2B, and they remainactivated during the intermediate operation phase(s).

Since the accumulator was previously activated, activating only Passd(211-1) results in accumulating the data value corresponding to thevoltage signal 205-1. Similarly, activating only Passdb (211-2) resultsin accumulating the data value corresponding to the voltage signal205-2. For instance, in an example AND/NAND operation (e.g., timingdiagram 285-2) in which only Passd (211-1) is activated, if the datavalue stored in the selected memory cell (e.g., a Row1 memory cell inthis example) is a logic 0, then the accumulated value associated withthe secondary latch is asserted low such that the secondary latch storeslogic 0. If the data value stored in the Row1 memory cell is not a logic0, then the secondary latch retains its stored Row0 data value (e.g., alogic 1 or a logic 0). As such, in this AND/NAND operation example, thesecondary latch is serving as a zeroes (0s) accumulator. Similarly, inan example OR/NOR operation (e.g., timing diagram 285-3) in which onlyPassdb is activated, if the data value stored in the selected memorycell (e.g., a Row1 memory cell in this example) is a logic 1, then theaccumulated value associated with the secondary latch is asserted highsuch that the secondary latch stores logic 1. If the data value storedin the Row1 memory cell is not a logic 1, then the secondary latchretains its stored Row0 data value (e.g., a logic 1 or a logic 0). Assuch, in this OR/NOR operation example, the secondary latch iseffectively serving as a ones (1s) accumulator since voltage signal205-2 on D_ is setting the true data value of the accumulator.

At the conclusion of an intermediate operation phase such as that shownin FIG. 2C-1 and 2C-2, the Passd signal (e.g., for AND/NAND) or thePassdb signal (e.g., for OR/NOR) is deactivated (e.g., at time t₅), theselected row is deactivated (e.g., at time t₆), the sense amp isdeactivated (e.g., at time t₇), and equilibration occurs (e.g., at timet₈). An intermediate operation phase such as that illustrated in FIG.2C-1 or 2C-2 can be repeated in order to accumulate results from anumber of additional rows. As an example, the sequence of timing diagram285-2 or 285-3 can be performed a subsequent (e.g., second) time for aRow2 memory cell, a subsequent (e.g., third) time for a Row3 memorycell, etc. For instance, for a 10-input NOR operation, the intermediatephase shown in FIG. 2C-2 can occur 9 times to provide 9 inputs of the10-input logical operation, with the tenth input being determined duringthe initial operation phase (e.g., as described in FIG. 2B).

FIGS. 2D-1 and 2D-2 illustrate timing diagrams 285-4 and 285-5,respectively, associated with performing a number of logical operationsusing sensing circuitry in accordance with a number of embodiments ofthe present disclosure. Timing diagrams 285-4 and 285-5 illustratesignals (e.g., voltage signals) associated with performing a lastoperation phase of a logical operation (e.g., an R-input logicaloperation). For instance, timing diagram 285-4 corresponds to a lastoperation phase of an R-input NAND operation or an R-input NORoperation, and timing diagram 285-5 corresponds to a last operationphase of an R-input AND operation or an R-input OR operation. Forexample, performing a NAND operation can include performing theoperation phase shown in FIG. 2D-1 subsequent to a number of iterationsof the intermediate operation phase described in association with FIG.2C-1, performing a NOR operation can include performing the operationphase shown in FIG. 2D-1 subsequent to a number of iterations of theintermediate operation phase described in association with FIG. 2C-2,performing an AND operation can include performing the operation phaseshown in FIG. 2D-2 subsequent to a number of iterations of theintermediate operation phase described in association with FIG. 2C-1,and performing an OR operation can include performing the operationphase shown in FIG. 2D-2 subsequent to a number of iterations of theintermediate operation phase described in association with FIG. 2C-2.Table 1 shown below indicates the Figures corresponding to the sequenceof operation phases associated with performing a number of R-inputlogical operations in accordance with a number of embodiments describedherein.

TABLE 1 Operation FIG. 2B FIG. 2C-1 FIG. 2C-2 FIG. 2D-1 FIG. 2D-2 ANDFirst R-1 Last phase iterations phase NAND First R-1 Last phaseiterations phase OR First R-1 Last phase iterations phase NOR First R-1Last phase iterations phase

The last operation phases of FIGS. 2D-1 and 2D-2 are described inassociation with storing a result of an R-input logical operation to arow of the array (e.g., array 230). However, as described above, in anumber of embodiments, the result can be stored to a suitable locationother than back to the array (e.g., to an external register associatedwith a controller and/or host processor, to a memory array of adifferent memory device, etc., via I/O lines).

As shown in timing diagrams 285-4 and 285-5, at time equilibration isdisabled (e.g., the equilibration signal 226 is deactivated) such thatsense lines D and D_ are floating. At time t₂, either the InvD signal213 or the Passd and Passdb signals 211 are activated, depending onwhich logical operation is being performed. In this example, the InvDsignal 213 is activated for a NAND or NOR operation (see FIG. 2D-1), andthe Passd and Passdb signals 211 are activated for an AND or ORoperation (see FIG. 2D-2).

Activating the InvD signal 213 at time t₂ (e.g., in association with aNAND or NOR operation) enables transistors 214-1/214-2 and results in aninverting of the data value stored in the secondary latch as eithersense line D or sense line D_ is pulled low. As such, activating signal213 inverts the accumulated output. Therefore, for a NAND operation, ifany of the memory cells sensed in the prior operation phases (e.g., theinitial operation phase and one or more intermediate operation phases)stored a logic 0 (e.g., if any of the R-inputs of the NAND operationwere a logic 0), then the sense line D_ will carry a voltagecorresponding to logic 0 (e.g., a ground voltage) and sense line D willcarry a voltage corresponding to logic 1 (e.g., a supply voltage such asVDD). For this NAND example, if all of the memory cells sensed in theprior operation phases stored a logic 1 (e.g., all of the R-inputs ofthe NAND operation were logic 1), then the sense line D_ will carry avoltage corresponding to logic 1 and sense line D will carry a voltagecorresponding to logic 0. At time t₃, the primary latch of sense amp 206is then activated (e.g., the sense amp is fired), driving D and D_ tothe appropriate rails, and the sense line D now carries the NANDedresult of the respective input data values as determined from the memorycells sensed during the prior operation phases. As such, sense line Dwill be at VDD if any of the input data values are a logic 0 and senseline D will be at ground if all of the input data values are a logic 1.

For a NOR operation, if any of the memory cells sensed in the prioroperation phases (e.g., the initial operation phase and one or moreintermediate operation phases) stored a logic 1 (e.g., if any of theR-inputs of the NOR operation were a logic 1), then the sense line D_will carry a voltage corresponding to logic 1 (e.g., VDD) and sense lineD will carry a voltage corresponding to logic 0 (e.g., ground). For thisNOR example, if all of the memory cells sensed in the prior operationphases stored a logic 0 (e.g., all of the R-inputs of the NOR operationwere logic 0), then the sense line D_ will carry a voltage correspondingto logic 0 and sense line D will carry a voltage corresponding tologic 1. At time t₃, the primary latch of sense amp 206 is thenactivated and the sense line D now contains the NORed result of therespective input data values as determined from the memory cells sensedduring the prior operation phases. As such, sense line D will be atground if any of the input data values are a logic 1 and sense line Dwill be at VDD if all of the input data values are a logic 0.

Referring to FIG. 2D-2, activating the Passd and Passdb signals 211(e.g., in association with an AND or OR operation) transfers theaccumulated output stored in the secondary latch of compute component231 to the primary latch of sense amp 206. For instance, for an ANDoperation, if any of the memory cells sensed in the prior operationphases (e.g., the first operation phase of FIG. 2B and one or moreiterations of the intermediate operation phase of FIG. 2C-1) stored alogic 0 (e.g., if any of the R-inputs of the AND operation were a logic0), then the sense line D_ will carry a voltage corresponding to logic 1(e.g., VDD) and sense line D will carry a voltage corresponding to logic0 (e.g., ground). For this AND example, if all of the memory cellssensed in the prior operation phases stored a logic 1 (e.g., all of theR-inputs of the AND operation were logic 1), then the sense line D_ willcarry a voltage corresponding to logic 0 and sense line D will carry avoltage corresponding to logic 1. At time t₃, the primary latch of senseamp 206 is then activated and the sense line D now carries the ANDedresult of the respective input data values as determined from the memorycells sensed during the prior operation phases. As such, sense line Dwill be at ground if any of the input data values are a logic 0 andsense line D will be at VDD if all of the input data values are a logic1.

For an OR operation, if any of the memory cells sensed in the prioroperation phases (e.g., the first operation phase of FIG. 2B and one ormore iterations of the intermediate operation phase shown in FIG. 2C-2)stored a logic 1 (e.g., if any of the R-inputs of the OR operation werea logic 1), then the sense line D_ will carry a voltage corresponding tologic 0 (e.g., ground) and sense line D will carry a voltagecorresponding to logic 1 (e.g., VDD). For this OR example, if all of thememory cells sensed in the prior operation phases stored a logic 0(e.g., all of the R-inputs of the OR operation were logic 0), then thesense line D will carry a voltage corresponding to logic 0 and senseline D_ will carry a voltage corresponding to logic 1. At time t₃, theprimary latch of sense amp 206 is then activated and the sense line Dnow carries the ORed result of the respective input data values asdetermined from the memory cells sensed during the prior operationphases. As such, sense line D will be at VDD if any of the input datavalues are a logic 1 and sense line D will be at ground if all of theinput data values are a logic 0.

The result of the R-input AND, OR, NAND, and NOR operations can then bestored back to a memory cell of array 230. In the examples shown inFIGS. 2D-1 and 2D-2, the result of the R-input logical operation isstored to a memory cell coupled to RowR (e.g., 204-R). Storing theresult of the logical operation to the RowR memory cell simply involvesenabling the RowR access transistor 202 by activating RowR. Thecapacitor 203 of the RowR memory cell will be driven to a voltagecorresponding to the data value on the sense line D (e.g., logic 1 orlogic 0), which essentially overwrites whatever data value waspreviously stored in the RowR memory cell. It is noted that the RowRmemory cell can be a same memory cell that stored a data value used asan input for the logical operation. For instance, the result of thelogical operation can be stored back to the Row0 memory cell or Row1memory cell.

Timing diagrams 285-4 and 285-5 illustrate, at time t₃, the positivecontrol signal 231 and the negative control signal 228 being deactivated(e.g., signal 231 goes high and signal 228 goes low) to activate thesense amp 206. At time t₄, the respective signal (e.g., 213 or 211) thatwas activated at time t₂ is deactivated. Embodiments are not limited tothis example. For instance, in a number of embodiments, the sense amp206 may be activated subsequent to time t₄, (e.g., after signal 213 orsignals 211 are deactivated).

As shown in FIGS. 2D-1 and 2D-2, at time t₅, RowR ( 204-R) is activated,which drives the capacitor 203 of the selected cell to the voltagecorresponding to the logic value stored in the accumulator. At time t₆,Row R is deactivated, at time t₇, the sense amp 206 is deactivated(e.g., signals 228 and 231 are deactivated) and at time t₈ equilibrationoccurs (e.g., signal 226 is activated and the voltages on thecomplementary sense lines 205-1/205-2 are brought to the equilibrationvoltage).

In a number of embodiments, sensing circuitry such as that described inFIG. 2A (e.g., circuitry formed on pitch with the memory cells) canenable performance of numerous logical operations in parallel. Forinstance, in an array having 16K columns, 16K logical operations can beperformed in parallel, without transferring data from the array andsensing circuitry via a bus and/or without transferring data from thearray and sensing circuitry via I/O lines.

Also, one of ordinary skill in the art will appreciate that the abilityto perform R-input logical operations (e.g., NAND, AND, NOR, OR, etc.)can enable performance of more complex computing functions such asaddition, subtraction, and multiplication, among other primary mathfunctions and/or pattern compare functions. For example, a series ofNAND operations can be combined to perform a full adder function. As anexample, if a full adder requires 12 NAND gates to add two data valuesalong with a carry in and carry out, a total of 384 NAND operations(12×32) could be performed to add two 32 bit numbers. Embodiments of thepresent disclosure can also be used to perform logical operations thatmay be non-boolean (e.g., copy, compare, etc.).

Additionally, in a number of embodiments, the inputs to a logicaloperation performed may not be data values stored in the memory array towhich the sensing circuitry (e.g., 150) is coupled. For instance, anumber of inputs to a logical operation can be sensed by a senseamplifier (e.g., 206) without activating a row of the array (e.g., 230).As an example, the number of inputs can be received by the sense amp 206via I/O lines coupled thereto (e.g., I/O lines 334-1 and 334-2 shown inFIG. 3). Such inputs may be provided to the sense amp 206 (e.g., via theappropriate I/O lines) from a source external to the array 230 such asfrom a host processor (e.g., host 110) and/or external controller, forinstance. As another example, in association with performing a logicaloperation, the inputs to a particular sense amp (e.g., 206) and itscorresponding compute component (e.g., 231) may be received from adifferent sense amp/compute component pair. For instance, a data value(e.g., logical result) stored in a first accumulator coupled to a firstcolumn of cells may be transferred to a different (e.g., neighboring)sense amp/compute component pair associated with a different column ofcells, which may or may not be located in the same array as the firstcolumn.

Embodiments of the present disclosure are not limited to the particularsensing circuitry configuration illustrated in FIG. 2A. For instance,different compute component circuitry can be used to perform logicaloperations in accordance with a number of embodiments described herein.Although not illustrated in FIG. 2A, in a number of embodiments, controlcircuitry can be coupled to array 230, sense amp 206, and/or computecomponent 231. Such control circuitry may be implemented on a same chipas the array and sensing circuitry and/or on an external processingresource such as an external processor, for instance, and can controlenabling/disabling various signals corresponding to the array andsensing circuitry in order to perform logical operations as describedherein.

The example logic operation phases described in association with FIGS.2A, 2B, 2C-1, 2C-2, 2D-1, and 2D-2 involve accumulating a data value(e.g., a data value sensed from a memory cell and/or a data valuecorresponding to a voltage or current of a sense line). Due toconservation of energy, the energy consumed in performing the logicoperation phase is approximately equal to the energy consumed duringcharging of the capacitance of the sense line D or D_ from VDD/2to VDD,which begins when the sense amp is activated (e.g., at time t₃ as shownin FIGS. 2B,2C-1,2C-2, 2D-1, and 2D-2). As such, performing a logicaloperation consumes approximately the energy used to charge a sense line(e.g., digit line) from VDD/2to VDD. In contrast, various previousprocessing approaches often consume at least an amount of energy used tocharge a sense line from rail to rail (e.g., from ground to VDD), whichmay be twice as much energy or more as compared to embodiments describedherein.

FIG. 3 illustrates a schematic diagram of a portion of sensing circuitryin accordance with a number of embodiments of the present disclosure. Inthis example, the portion of sensing circuitry comprises a senseamplifier 306. In a number of embodiments, one sense amplifier 306(e.g., “sense amp”) is provided for each column of memory cells in anarray (e.g., array 130). The sense amp 306 can be sense amp of a DRAMarray, for instance. In this example, sense amp 306 is coupled to a pairof complementary sense lines 305-1 (“D”) and 305-2 (“D_”). As such, thesense amp 306 is coupled to all of the memory cells in a respectivecolumn through sense lines D and D_.

The sense amplifier 306 includes a pair of cross coupled n-channeltransistors (e.g., NMOS transistors) 327-1 and 327-2 having theirrespective sources coupled to a negative control signal 328 (RNL_) andtheir drains coupled to sense lines D and D_, respectively. The senseamplifier 306 also includes a pair of cross coupled p-channeltransistors (e.g., PMOS transistors) 329-1 and 329-2 having theirrespective sources coupled to a positive control signal 331 (PSA) andtheir drains coupled to sense lines D and D_, respectively.

The sense amp 306 includes a pair of isolation transistors 321-1 and321-2 coupled to sense lines D and D_, respectively. The isolationtransistors 321-1 and 321-2 are coupled to a control signal 322 (ISO)that, when activated, enables (e.g., turns on) the transistors 321-1 and321-2 to connect the sense amp 306 to a column of memory cells. Althoughnot illustrated in FIG. 3, the sense amp 306 may be coupled to a firstand a second memory array and can include another pair of isolationtransistors coupled to a complementary control signal (e.g., ISO_),which is deactivated when ISO is deactivated such that the sense amp 306is isolated from a first array when sense amp 306 is coupled to a secondarray, and vice versa.

The sense amp 306 also includes circuitry configured to equilibrate thesense lines D and D_. In this example, the equilibration circuitrycomprises a transistor 324 having a first source/drain region coupled toan equilibration voltage 325 (dvc2), which can be equal to VDD/2, whereVDD is a supply voltage associated with the array. A second source/drainregion of transistor 324 is coupled to a common first source/drainregion of a pair of transistors 323-1 and 323-2. The second source drainregions of transistors 323-1 and 323-2 are coupled to sense lines D andD_, respectively. The gates of transistors 324, 323-1, and 323-2 arecoupled to control signal 326 (EQ). As such, activating EQ enables thetransistors 324, 323-1, and 323-2, which effectively shorts sense line Dto sense line D_such that the sense lines D and D_are equilibrated toequilibration voltage dvc2.

The sense amp 306 also includes transistors 332-1 and 332-2 whose gatesare coupled to a signal 333 (COLDEC). Signal 333 may be referred to as acolumn decode signal or a column select signal. The sense lines D and D_are connected to respective local I/O lines 334-1 (IO) and 334-2 (IO_)responsive to enabling signal 333 (e.g., to perform an operation such asa sense line access in association with a read operation). As such,signal 333 can be activated to transfer a signal corresponding to thestate (e.g., a logic data value such as logic 0 or logic 1) of thememory cell being accessed out of the array on the I/O lines 334-1 and334-2.

In operation, when a memory cell is being sensed (e.g., read), thevoltage on one of the sense lines D, D_ will be slightly greater thanthe voltage on the other one of sense lines D, D_. The PSA signal isthen driven high and the RNL_signal is driven low to activate the senseamplifier 306. The sense line D, D having the lower voltage will turn onone of the PMOS transistor 329-1, 329-2 to a greater extent than theother of PMOS transistor 329-1, 329-2, thereby driving high the senseline D, D_ having the higher voltage to a greater extent than the othersense line D, D_ is driven high. Similarly, the sense line D, D_ havingthe higher voltage will turn on one of the NMOS transistor 327-1, 327-2to a greater extent than the other of the NMOS transistor 327-1, 327-2,thereby driving low the sense line D, D_ having the lower voltage to agreater extent than the other sense line D, D_ is driven low. As aresult, after a short delay, the sense line D, D_ having the slightlygreater voltage is driven to the voltage of the PSA signal (which can bethe supply voltage VDD), and the other sense line D, D_ is driven to thevoltage of the RNL_ signal (which can be a reference potential such as aground potential). Therefore, the cross coupled NMOS transistors 327-1,327-2 and PMOS transistors 329-1, 329-2 serve as a sense amp pair, whichamplify the differential voltage on the sense lines D and D_ and serveto latch a data value sensed from the selected memory cell. As usedherein, the cross coupled latch of sense amp 306 may be referred to as aprimary latch. In contrast, and as described above in connection withFIG. 2A, a cross coupled latch associated with a compute component(e.g., compute component 231 shown in FIG. 2A) may be referred to as asecondary latch.

Conclusion

The present disclosure includes apparatuses and methods related toperforming logical operations using sensing circuitry. An exampleapparatus comprises an array of memory cells and sensing circuitrycomprising a primary latch coupled to a sense line of the array. Thesensing circuitry can be configured to perform a first operation phaseof a logical operation by sensing a memory cell coupled to the senseline, perform a number of intermediate operation phases of the logicaloperation by sensing a respective number of different memory cellscoupled to the sense line, and accumulate a result of the firstoperation phase and the number of intermediate operation phases in asecondary latch coupled to the primary latch without performing a senseline address access.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of one or more embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the one or moreembodiments of the present disclosure includes other applications inwhich the above structures and methods are used. Therefore, the scope ofone or more embodiments of the present disclosure should be determinedwith reference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

1.-20. (canceled)
 21. A system, comprising: a host; and a memory devicecoupled to the host and comprising an array coupled to sensingcircuitry; wherein the sensing circuitry comprises a first latch coupledto a sense line of the array, and a second latch coupled to the firstlatch; and wherein, responsive to an instruction received from the host,the sensing circuitry is controlled to perform a logical OR operationby: performing a first operation phase that comprises sensing a memorycell coupled to the sense line; and performing a number of intermediateoperation phases, wherein each one of the number of intermediateoperations comprises sensing one of a respective number of differentmemory cells coupled to the sense line; wherein subsequent to the numberof intermediate operation phases, an accumulated result of the logicalOR operation resides in the second latch.
 22. The system of claim 21,wherein the first latch is a latch of a sense amplifier and the secondlatch is a latch of a compute component.
 23. The system of claim 21,wherein the sensing circuitry is further controlled to obtain a NORlogical operation result by inverting, via an invert signal provided tothe compute component, the accumulated result of the logical ORoperation residing in the second latch.
 24. The system of claim 23,wherein the sensing circuitry is further controlled to transfer the NORlogical operation result from the second latch to the first latch. 25.The system of claim 23, wherein the sensing circuitry is controlled totransfer the NOR logical operation result from the second latch to thefirst latch via enabling of the first latch while the invert signal isprovided to the compute component.
 26. The system of claim 21, whereinthe host comprises a processor external to the memory device.
 27. Asystem, comprising: a host; and a memory device coupled to the host andcomprising a controller configured to control sensing circuitry coupledto an array to: sense, via a sense amplifier coupled to a sense line ofthe array, a data value serving as a first input of a logical ANDoperation; provide the determined data value to a latch of a computecomponent coupled to the sense amplifier; and determine a number ofadditional data values stored in a number of memory cells coupled to thesense line and serving as a respective number of additional inputs ofthe logical AND operation; and wherein a determined result of thelogical AND operation is stored in the latch of the compute component.28. The system of claim 27, wherein the number of additional data valuesare determined via respective sense operations via the sense amplifier.29. The system of claim 27, wherein the compute component comprises: afirst and a second pair of cross coupled transistors; a pair of passtransistors; and a pair of invert transistors.
 30. The system of claim27, wherein the controller is further configured to control the sensingcircuitry to obtain a NAND logical operation result by inverting, via aninvert signal provided to the compute component, the determined resultof the logical AND operation stored in the latch of the computecomponent.
 31. A method of operating a system, the method comprising:receiving instructions at a memory device from a host; and executing theinstructions on the memory device, wherein executing the instructionscomprises performing a logical OR operation by: activating a firstaccess line to which a first memory cell is coupled, the first memorycell storing a data value corresponding to a first input of the logicalOR operation; latching the data value corresponding to the first inputin a first latch of sensing circuitry corresponding to a sense line towhich the first memory cell is coupled; and copying, to a second latchof the sensing circuitry, the data value corresponding to the firstinput; activating a second access line to which a second memory cell iscoupled, the second memory cell storing a data value corresponding to asecond input of the logical OR operation; while the second access lineis activated, activating the first latch; wherein subsequent toactivating the first latch while the second access line is activated,the second latch stores an accumulated result of the logical ORoperation.
 32. The method of claim 31, wherein the method includesmaintaining the second latch in an activated state while the first latchis activated during activation of the second access line.
 33. The methodof claim 31, wherein the method includes transferring the accumulatedresult of the logical OR operation to at least one of: a memory cell ofan array comprising the first access line and the second access line;and the first latch.
 34. The method of claim 31, wherein the methodfurther includes obtaining a NOR logical operation result by inverting,via an invert signal provided to a compute component comprising thesecond latch, the accumulated result of the logical OR operationresiding in the second latch.
 35. The method of claim 31, wherein thehost is an external host comprising a processor, and wherein the methodincludes receiving the instructions at the memory device from theprocessor.
 36. A method of operating a system, the method comprising:receiving instructions at a memory device from a host; and executing theinstructions on the memory device, wherein executing the instructionscomprises performing a logical AND operation by: performing a firstoperation phase that includes: activating a first access line of thearray, the first access line coupled to a first memory cell storing adata value corresponding to a first input of the logical AND operation;activating a first latch of sensing circuitry coupled to a sense line towhich the first memory cell is coupled in order to latch the data valuetherein; activating a second latch of the sensing circuitry to copy thedata value latched in the first latch to the second latch; andperforming a second operation phase that includes: activating a secondaccess line to which a second memory cell is coupled, the second memorycell storing a data value corresponding to a second input of the logicalAND operation; while the second access line is activated, activating thefirst latch; and wherein subsequent to activating the first latch whilethe second access line is activated, the second latch stores anaccumulated result of the logical AND operation.
 37. The method of claim36, wherein the method includes obtaining a NAND logical operationresult by inverting, via an invert signal provided to a computecomponent comprising the second latch, the accumulated result of thelogical AND operation stored in the second latch subsequent to thesecond operation phase.
 38. The method of claim 36, wherein the memorydevice comprises a controller, and wherein receiving instructions at thememory device comprises receiving instructions to the controller via ahost interface.
 39. The method of claim 36, wherein performing thelogical AND operation further comprises performing a last operationphase comprising: copying the accumulated result of the logical ANDoperation stored in the second latch to a particular memory cell of thearray by activating the particular row.
 40. The method of claim 36,wherein the method includes providing the accumulated result of thelogical AND operation to the host.